Technische Details IRL2703SPBF IR
Description: MOSFET N-CH 30V 24A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote IRL2703SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL2703SPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 30V 24A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRL2703SPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL2703SPBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 40mOhms 10nC |
Produkt ist nicht verfügbar |