IRL2910STRRPBF Infineon Technologies

Description: MOSFET N-CH 100V 55A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Not For New Designs, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).