IRL3102SPBF

IRL3102SPBF Infineon Technologies


irl3102spbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 61A 3-Pin(2+Tab) D2PAK
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Technische Details IRL3102SPBF Infineon Technologies

Description: MOSFET N-CH 20V 61A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V.

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IRL3102SPBF IRL3102SPBF Hersteller : Infineon Technologies IRL3102SPbF.pdf Description: MOSFET N-CH 20V 61A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
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IRL3102SPBF IRL3102SPBF Hersteller : Infineon / IR irl3102s-1169508.pdf MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC
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