IRL3303D1STRR Vishay Siliconix

Description: MOSFET N-CH 30V 38A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).