IRL3402PBF Infineon Technologies


IRL3402.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 85A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Technische Details IRL3402PBF Infineon Technologies

Description: MOSFET N-CH 20V 85A TO220AB, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.

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IRL3402PBF IRL3402PBF Infineon / IR irl3402-1169621.pdf MOSFET 20V 1 N-CH HEXFET 10mOhms 52nC
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IRL3402PBF irl3402-1169621.pdf
Hersteller: Infineon / IR
MOSFET 20V 1 N-CH HEXFET 10mOhms 52nC
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