IRL3502PBF International Rectifier
| Anzahl | Privatkunde |
|---|---|
| 30+ | 5.96 EUR |
| 52+ | 3.3 EUR |
| 100+ | 2.23 EUR |
| 500+ | 2.06 EUR |
| 1000+ | 1.9 EUR |
| 2500+ | 1.76 EUR |
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Technische Details IRL3502PBF International Rectifier
Description: MOSFET N-CH 20V 110A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IRL3502PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IRL3502PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 110A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRL3502PBF | Infineon Technologies |
MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL3502PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 20V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRL3502PBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms
MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



