IRL3502PBF International Rectifier
| Anzahl | Privatkunde |
|---|---|
| 30+ | 6.03 EUR |
| 52+ | 3.33 EUR |
| 100+ | 2.25 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.92 EUR |
| 2500+ | 1.78 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
30 Stücke
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Technische Details IRL3502PBF International Rectifier
Description: MOSFET N-CH 20V 110A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.
Weitere Produktangebote IRL3502PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IRL3502PBF | Infineon Technologies |
 Description: MOSFET N-CH 20V 110A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRL3502PBF | Infineon Technologies |
MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL3502PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: MOSFET N-CH 20V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRL3502PBF |
|
Hersteller: Infineon Technologies
MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms
MOSFETs 20V 1 N-CH HEXFET PWR MOSFET 8mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH