IRL3502SPBF Infineon Technologies


IRL3502SPbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details IRL3502SPBF Infineon Technologies

Description: MOSFET N-CH 20V 110A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.

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IRL3502SPBF IRL3502SPBF Infineon / IR irl3502s-1169598.pdf MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC
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IRL3502SPBF irl3502s-1169598.pdf
Hersteller: Infineon / IR
MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC
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