IRL3705ZSPBF
Produktcode: 26657
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Lieblingsprodukt
Hersteller: IR
Gehäuse: D2Pak (TO-263-3)
Uds,V: 55 V
Idd,A: 75 A
Rds(on), Ohm: 8 mOhm
Ciss, pF/Qg, nC: 2880/40
JHGF: SMD
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Technische Details IRL3705ZSPBF IR
- MOSFET, N, 55V, 86A, D2-PAK
- Transistor Polarity:N
- Max Voltage Vds:55V
- On State Resistance:0.008ohm
- Power Dissipation:130W
- Transistor Case Style:D2-PAK
- Alternate Case Style:D2-PAK
- Case Style:D2-PAK
- Cont Current Id:86A
- Junction to Case Thermal Resistance A:1.14`C/W
- Max Voltage Vgs th:3V
- On State resistance @ Vgs = 10V:0.008ohm
- Power Dissipation Pd:130W
- Pulse Current Idm:340A
- Termination Type:SMD
- Transistor Type:MOSFET
- Typ Voltage Vds:55V
- Typ Voltage Vgs th:3V
- Voltage Vds:55V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRL3705ZSPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRL3705ZSPBF | Hersteller : Infineon / IR |
MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC |
auf Bestellung 409 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
IRL3705ZSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
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