IRL3716LPBF

IRL3716LPBF Infineon Technologies


irl3716pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 180A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRL3716LPBF Infineon Technologies

Description: MOSFET N-CH 20V 180A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V.

Weitere Produktangebote IRL3716LPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRL3716LPBF IRL3716LPBF Hersteller : Infineon Technologies IRL3716(S,L)PbF.pdf Description: MOSFET N-CH 20V 180A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 10 V
Produkt ist nicht verfügbar
IRL3716LPBF IRL3716LPBF Hersteller : Infineon / IR irl3716-1169386.pdf MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC
Produkt ist nicht verfügbar