IRL40B215 Infineon Technologies
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 2.22 EUR |
| 100+ | 2.05 EUR |
| 250+ | 1.89 EUR |
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Technische Details IRL40B215 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V, Power Dissipation (Max): 143W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V.
Weitere Produktangebote IRL40B215 nach Preis ab 1.78 EUR bis 2.68 EUR
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IRL40B215 | Hersteller : Infineon Technologies |
 MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl |
auf Bestellung 709 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL40B215 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL40B215 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL40B215 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRL40B215 - IRL40B215 12V-300V N-CHANNEL POWER MOSF tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 8025 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40B215 | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL40B215 | Hersteller : International Rectifier HiRel Products |
Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL40B215 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRL40B215 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 100µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V |
Produkt ist nicht verfügbar |