IRL40B215 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.81 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.67 EUR |
| 1000+ | 2.43 EUR |
| 3000+ | 2.12 EUR |
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Technische Details IRL40B215 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.4V @ 100µA, Power Dissipation (Max): 143W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Weitere Produktangebote IRL40B215 nach Preis ab 3.19 EUR bis 3.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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IRL40B215 | Infineon Technologies |
 Description: MOSFET N-CH 40V 120A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL40B215 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 98A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 6200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 3.19 EUR |