IRL40DM247XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-8-904
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ME
Packaging: Cut Tape (CT)
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Technische Details IRL40DM247XTMA1 Infineon Technologies
Description: TRENCH .
Weitere Produktangebote IRL40DM247XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRL40DM247XTMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-8-904 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRL40DM247XTMA1 | Infineon Technologies |
MOSFETs Y |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRL40DM247XTMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-8-904
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-8-904
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRL40DM247XTMA1 |
|
Hersteller: Infineon Technologies
MOSFETs Y
MOSFETs Y
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen
Stück im Wert von UAH