IRL40S212 Infineon Technologies

Description: MOSFET N-CH 40V 195A D2PAK, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 2.4V @ 150µA, Power Dissipation (Max): 231W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V.