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IRL5602STRRPBF

IRL5602STRRPBF Infineon Technologies


irl5602spbf.pdf Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 20V 24A 3-Pin(2+Tab) D2PAK T/R
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Technische Details IRL5602STRRPBF Infineon Technologies

Description: MOSFET P-CH 20V 24A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 4.5V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V.

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IRL5602STRRPBF IRL5602STRRPBF Hersteller : Infineon Technologies IRL5602SPbF.pdf Description: MOSFET P-CH 20V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
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IRL5602STRRPBF IRL5602STRRPBF Hersteller : Infineon / IR irl5602s-1169573.pdf MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC
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