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Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.87 EUR |
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Technische Details IRL60B216 Infineon
Description: MOSFET N-CH 60V 195A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IRL60B216
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRL60B216 | Infineon Technologies |
 Description: MOSFET N-CH 60V 195A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRL60B216 | Infineon Technologies |
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL60B216 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRL60B216 |
|
Hersteller: Infineon Technologies
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH