IRL60SC216ARMA1 Infineon Technologies
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.22 EUR |
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Technische Details IRL60SC216ARMA1 Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 324A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 2.4W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PG-TO263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V.
Weitere Produktangebote IRL60SC216ARMA1 nach Preis ab 3.24 EUR bis 7.32 EUR
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IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 324A 7-Pin(6+Tab) TO-263 T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH 40<-<100V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
N-Channel MOSFET Transistor |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 324A 7-Pin(6+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
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IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 324A 7-Pin(6+Tab) TO-263 T/R |
Produkt ist nicht verfügbar |
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IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 324A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 324A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
Produkt ist nicht verfügbar |
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IRL60SC216ARMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 324A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 324A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
Produkt ist nicht verfügbar |