IRL620PBF-BE3 Vishay Siliconix

Description: MOSFET N-CH 200V 5.2A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: TO-220-3, Packaging: Tube, Mounting Type: Through Hole.