| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.14 EUR |
| 10+ | 2.48 EUR |
| 100+ | 2.15 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.57 EUR |
| 2000+ | 1.52 EUR |
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Technische Details IRL620PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: TO-220-3, Packaging: Tube, Mounting Type: Through Hole.
Weitere Produktangebote IRL620PBF-BE3 nach Preis ab 2.48 EUR bis 5.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IRL620PBF-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 200V 5.2A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-220-3 Packaging: Tube Mounting Type: Through Hole |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRL620PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
Description: MOSFET N-CH 200V 5.2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-220-3
Packaging: Tube
Mounting Type: Through Hole
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.05 EUR |
| 50+ | 2.48 EUR |