Technische Details IRL630A FAIRCHIL
Description: MOSFET N-CH 200V 9A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 69W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 5V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IRL630A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRL630A | Hersteller : ONS/FAI |
 TO-220AB Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRL630A | Hersteller : onsemi |
Description: MOSFET N-CH 200V 9A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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IRL630A | Hersteller : onsemi / Fairchild |
MOSFETs 200V N-Channel a-FET Logic Level |
Produkt ist nicht verfügbar |