IRL6372PBF
Produktcode: 106344
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Hersteller: IR
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Weitere Produktangebote IRL6372PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IRL6372PBF | International Rectifier |
N-Channel, Dual, SOIC-8 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRL6372PBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8.1A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL6372PBF |
|
Hersteller: International Rectifier
N-Channel, Dual, SOIC-8 Транзистори
N-Channel, Dual, SOIC-8 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRL6372PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH