Technische Details IRL8113S IR
Description: MOSFET N-CH 30V 105A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.25V @ 250µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IRL8113S nach Preis ab 0.78 EUR bis 0.84 EUR
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IRL8113S Produktcode: 99528
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Lieblingsprodukt
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IR |
 Transistoren > MOSFET N-CHGehäuse: D2Pak (TO-263-3) Uds,V: 30 Idd,A: 74 Rds(on), Ohm: 6 mOhm Ciss, pF/Qg, nC: 2840/23 Bem.: Керування логічним рівнем JHGF: SMD |
Produkt ist nicht verfügbar
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IRL8113S | Infineon Technologies |
Description: MOSFET N-CH 30V 105A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRL8113S Produktcode: 99528
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 30
Idd,A: 74
Rds(on), Ohm: 6 mOhm
Ciss, pF/Qg, nC: 2840/23
Bem.: Керування логічним рівнем
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 30
Idd,A: 74
Rds(on), Ohm: 6 mOhm
Ciss, pF/Qg, nC: 2840/23
Bem.: Керування логічним рівнем
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 0.84 EUR |
| 10+ | 0.78 EUR |
| IRL8113S |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 105A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 30V 105A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH