IRLH7134TR2PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
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Technische Details IRLH7134TR2PBF Infineon Technologies
Description: MOSFET N-CH 40V 26A 8PQFN, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 8-PQFN (5x6), Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V.
Weitere Produktangebote IRLH7134TR2PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRLH7134TR2PBF | Hersteller : Infineon / IR |
MOSFET 40V 50A 3.3mOhm 39nC Qg Logic Level |
Produkt ist nicht verfügbar |
