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Technische Details IRLH7134TRPBF Infineon / IR
Description: MOSFET N-CH 40V 26A/85A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRLH7134TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRLH7134TRPBF | International Rectifier |
MOSF N CH 40V 26A PQFN 5X6E Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
IRLH7134TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 26A/85A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRLH7134TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 26A/85A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLH7134TRPBF |
![]() |
Hersteller: International Rectifier
MOSF N CH 40V 26A PQFN 5X6E Транзистори
MOSF N CH 40V 26A PQFN 5X6E Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLH7134TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLH7134TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


