IRLHM620TR2PBF
Produktcode: 79678
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Weitere Produktangebote IRLHM620TR2PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRLHM620TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 20V 26A PQFN Packaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 50µA Supplier Device Package: PQFN (3x3) Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLHM620TR2PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 26A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 10 V
Description: MOSFET N-CH 20V 26A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH