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IRLHM630TRPBF

IRLHM630TRPBF Infineon Technologies

irlhm630pbf.pdf?fileId=5546d462533600a401535663951725a5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.64 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRLHM630TRPBF Infineon Technologies

Description: MOSFET N-CH 30V 21A/40A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V, Power Dissipation (Max): 2.7W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 50µA, Supplier Device Package: PQFN (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V.

Weitere Produktangebote IRLHM630TRPBF nach Preis ab 0.68 EUR bis 2.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRLHM630TRPBF IRLHM630TRPBF Infineon Technologies Infineon_IRLHM630_DataSheet_v01_01_EN-3166573.pdf MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.74 EUR
10+1.55 EUR
100+1.21 EUR
500+1 EUR
1000+0.87 EUR
4000+0.74 EUR
8000+0.68 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLHM630TRPBF IRLHM630TRPBF Infineon Technologies irlhm630pbf.pdf?fileId=5546d462533600a401535663951725a5 Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
auf Bestellung 7349 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLHM630TRPBF Infineon_IRLHM630_DataSheet_v01_01_EN-3166573.pdf
IRLHM630TRPBF
Hersteller: Infineon Technologies
MOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.74 EUR
10+1.55 EUR
100+1.21 EUR
500+1 EUR
1000+0.87 EUR
4000+0.74 EUR
8000+0.68 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRLHM630TRPBF irlhm630pbf.pdf?fileId=5546d462533600a401535663951725a5
IRLHM630TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
auf Bestellung 7349 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH