IRLHS6376TR2PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 3.6A 6PQFN, Vgs(th) (Max) @ Id: 1.1V @ 10µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V, Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.5W, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-VDFN Exposed Pad, Packaging: Cut Tape (CT), Supplier Device Package: 6-PQFN (2x2).