IRLI540GPBF Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.4 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.34 EUR |
| 250+ | 2.24 EUR |
| 500+ | 2.06 EUR |
| 1000+ | 1.7 EUR |
| 2000+ | 1.58 EUR |
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Technische Details IRLI540GPBF Vishay Semiconductors
Description: MOSFET N-CH 100V 17A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote IRLI540GPBF nach Preis ab 2.74 EUR bis 3.8 EUR
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IRLI540GPBF | Vishay Siliconix |
 Description: MOSFET N-CH 100V 17A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLI540GPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 17A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 100V 17A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.8 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.74 EUR |