IRLIB4343

Description: MOSFET N-CH 55V 19A TO220AB FP, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 1V @ 250µA.