IRLIZ14GPBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.8A, 5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.84 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.87 EUR |
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Technische Details IRLIZ14GPBF Vishay Siliconix
Description: MOSFET N-CH 60V 8A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 27W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.8A, 5V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote IRLIZ14GPBF
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRLIZ14GPBF |
(MFET,N-CH,60V,8A,TO-220) Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRLIZ14GPBF | Vishay Semiconductors |
MOSFETs TO220 N-CH 60V 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLIZ14GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP Type of transistor: N-MOSFET Mounting: THT Case: TO220FP Polarisation: unipolar Gate charge: 8.4nC On-state resistance: 0.28Ω Drain current: 8A Gate-source voltage: ±10V Power dissipation: 27W Pulsed drain current: 32A Drain-source voltage: 60V Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLIZ14GPBF |
|
(MFET,N-CH,60V,8A,TO-220) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLIZ14GPBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 N-CH 60V 8A
MOSFETs TO220 N-CH 60V 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLIZ14GPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Drain current: 8A
Gate-source voltage: ±10V
Power dissipation: 27W
Pulsed drain current: 32A
Drain-source voltage: 60V
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 27W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 8.4nC
On-state resistance: 0.28Ω
Drain current: 8A
Gate-source voltage: ±10V
Power dissipation: 27W
Pulsed drain current: 32A
Drain-source voltage: 60V
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH