| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.83 EUR |
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Technische Details IRLIZ34GPBF Vishay Semiconductors
Description: MOSFET N-CH 60V 20A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Weitere Produktangebote IRLIZ34GPBF nach Preis ab 1.94 EUR bis 5.32 EUR
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IRLIZ34GPBF | Vishay Siliconix |
 Description: MOSFET N-CH 60V 20A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 982 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLIZ34GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 60V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.32 EUR |
| 50+ | 2.47 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.94 EUR |