IRLL024NTRPBF Infineon Technologies
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 603+ | 0.25 EUR |
| 607+ | 0.24 EUR |
| 681+ | 0.20 EUR |
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Technische Details IRLL024NTRPBF Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRLL024NTRPBF nach Preis ab 0.24 EUR bis 1.61 EUR
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 72500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 72500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 222500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 3.1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 94196 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 6380 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1430 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL024NTRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1430 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF Produktcode: 92254
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 3.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 94474 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl |
auf Bestellung 14781 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : INFINEON |
Description: INFINEON - IRLL024NTRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 3.1 A, 0.065 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 3.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 22421 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : INFINEON |
Description: INFINEON - IRLL024NTRPBF - Leistungs-MOSFET, n-Kanal, 55 V, 3.1 A, 0.065 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 3.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 22421 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |