IRLL110PBF

Hersteller: Vishay/IR
P-канальний ПТ, Udss, В = 100, Id = 1,5 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 250 @ 25, Qg, нКл = 6,1 @ 5 В, Rds = 540 мОм @ 900 мА, 5 В, Tексп, °C = -55...+150, Ugs(th) = 2 В @ 250 мкА,... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 40 Stücke

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V

Hersteller: Vishay / Siliconix
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