IRLL2703TR International Rectifier
Hersteller: International Rectifier
N-MOSFET HEXFET 30V 3.9A 1W 0.045Ω IRLL2703 TIRLL2703
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 30V 3.9A 1W 0.045Ω IRLL2703 TIRLL2703
Anzahl je Verpackung: 10 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.86 EUR |
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Technische Details IRLL2703TR International Rectifier
Description: MOSFET N-CH 30V 3.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Weitere Produktangebote IRLL2703TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRLL2703TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 3.9A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
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