Technische Details IRLL3303TRPBF International Rectifier
Description: MOSFET N-CH 30V 4.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V.
Weitere Produktangebote IRLL3303TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRLL3303TRPBF | International Rectifier/Infineon |
  Транзистор полевой N канальный, Vdss=30V, Id=4.6A, Rds(on)=0.031 Ohm, HEXFET® Power MOSFET, SOT-223... Транзистори Корпус: SOT-223 Од. вим: штAnzahl je Verpackung: 80 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRLL3303TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 4.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRLL3303TRPBF | Infineon / IR |
MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLL3303TRPBF | |
|
Hersteller: International Rectifier/Infineon
Транзистор полевой N канальный, Vdss=30V, Id=4.6A, Rds(on)=0.031 Ohm, HEXFET® Power MOSFET, SOT-223... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 80 Stücke
Транзистор полевой N канальный, Vdss=30V, Id=4.6A, Rds(on)=0.031 Ohm, HEXFET® Power MOSFET, SOT-223... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 80 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLL3303TRPBF | |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLL3303TRPBF | |
|
Hersteller: Infineon / IR
MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl
MOSFET MOSFT 30V 4.6A 31mOhm 34nC Log Lvl
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH