IRLML6246TRPBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.15 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLML6246TRPBF Infineon Technologies
Description: INFINEON - IRLML6246TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 4.1 A, 0.046 ohm, TO-236AB (SOT-23), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 4.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 1.3W, Gate-Source-Schwellenspannung, max.: 1.1V, Verlustleistung: 1.3W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-236AB (SOT-23), Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3Pin(s), Produktpalette: HEXFET Series, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.03ohm, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.046ohm.
Weitere Produktangebote IRLML6246TRPBF nach Preis ab 0.14 EUR bis 0.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IRLML6246TRPBF | Infineon Technologies |
 Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R |
auf Bestellung 162000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML6246TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 4.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 5µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 16 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML6246TRPBF | Infineon Technologies |
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R |
auf Bestellung 8532 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML6246TRPBF | Infineon Technologies |
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R |
auf Bestellung 8532 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML6246TRPBF | Infineon Technologies |
MOSFETs MOSFT 20V 4.1A 46mOhm 2.5V cpbl |
auf Bestellung 1902 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML6246TRPBF | Infineon Technologies |
Description: MOSFET N-CH 20V 4.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 5µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 16 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLML6246TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Power dissipation: 1.3W Case: SOT23 On-state resistance: 46mΩ Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 3.5nC Gate-source voltage: ±12V |
auf Bestellung 8913 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRLML6246TRPBF | Infineon Technologies |
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
auf Bestellung 162000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 5µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 16 V
Description: MOSFET N-CH 20V 4.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 5µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 16 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.17 EUR |
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
auf Bestellung 8532 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 379+ | 0.45 EUR |
| 467+ | 0.37 EUR |
| 597+ | 0.27 EUR |
| 870+ | 0.19 EUR |
| 3000+ | 0.14 EUR |
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
auf Bestellung 8532 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 220+ | 0.79 EUR |
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFT 20V 4.1A 46mOhm 2.5V cpbl
MOSFETs MOSFT 20V 4.1A 46mOhm 2.5V cpbl
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.83 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.25 EUR |
| 3000+ | 0.15 EUR |
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 5µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 16 V
Description: MOSFET N-CH 20V 4.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 5µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 16 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 40+ | 0.54 EUR |
| 55+ | 0.38 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| IRLML6246TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 46mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 46mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 3.5nC
Gate-source voltage: ±12V
auf Bestellung 8913 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLML6246TRPBF |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4.1A 3-Pin SOT-23 T/R
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)