IRLML6302PBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1713 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
221+ | 0.32 EUR |
455+ | 0.16 EUR |
569+ | 0.13 EUR |
625+ | 0.11 EUR |
3000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLML6302PBF INFINEON TECHNOLOGIES
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23, Type of transistor: P-MOSFET, Technology: HEXFET®, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -0.62A, Power dissipation: 0.54W, Case: SOT23, Gate-source voltage: ±12V, On-state resistance: 0.6Ω, Mounting: SMD, Gate charge: 2.4nC, Kind of channel: enhanced, Features of semiconductor devices: logic level, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IRLML6302PBF nach Preis ab 0.11 EUR bis 0.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRLML6302PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.62A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 2.4nC Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 1713 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
IRLML6302PBF | Hersteller : Infineon Technologies | MOSFET P-CH 20V 780mA SOT-23 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||
IRLML6302PBF | Hersteller : Infineon / IR | MOSFET |
Produkt ist nicht verfügbar |