Technische Details IRLML6302PBF Infineon Technologies
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23, Type of transistor: P-MOSFET, Technology: HEXFET®, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -0.62A, Power dissipation: 0.54W, Case: SOT23, Mounting: SMD, Kind of channel: enhancement, Features of semiconductor devices: logic level, Gate charge: 2.4nC, On-state resistance: 0.6Ω, Gate-source voltage: ±12V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IRLML6302PBF
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IRLML6302PBF | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.62A Power dissipation: 0.54W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 2.4nC On-state resistance: 0.6Ω Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRLML6302PBF | Hersteller : Infineon / IR | MOSFETs |
Produkt ist nicht verfügbar |
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IRLML6302PBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.62A Power dissipation: 0.54W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 2.4nC On-state resistance: 0.6Ω Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |