Technische Details IRLML6302 TR IR
Description: MOSFET P-CH 20V 780MA SOT-23, Power Dissipation (Max): 540mW (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 780mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Cut Tape (CT), Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1.5V @ 250µA.
Weitere Produktangebote IRLML6302 TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IRLML6302TR | Infineon Technologies |
 Description: MOSFET P-CH 20V 780MA SOT-23Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 780mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLML6302TR |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT-23
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Description: MOSFET P-CH 20V 780MA SOT-23
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH