IRLML6302TR UMW

Description: MOSFET P-CH 20V 780MA SOT-23, Power Dissipation (Max): 540mW (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 780mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Cut Tape (CT), Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1.5V @ 250µA.