IRLML6401TR JGSEMI

Description: MOSFET P-CH 12V 4.3A SOT-23, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Cut Tape (CT), Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Drain to Source Voltage (Vdss): 12 V, Part Status: Obsolete, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 950mV @ 250µA, Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: P-Channel, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Power Dissipation (Max): 1.3W (Ta), Operating Temperature: -55°C ~ 155°C (TJ).