Technische Details IRLMS6802TR IR
Description: MOSFET P-CH 20V 5.6A 6-TSOP, Packaging: Cut Tape (CT), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro6™(SOT23-6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V.
Weitere Produktangebote IRLMS6802TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRLMS6802TR | Infineon Technologies |
 Description: MOSFET P-CH 20V 5.6A 6-TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro6™(SOT23-6) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLMS6802TR |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 5.6A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
Description: MOSFET P-CH 20V 5.6A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH