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IRLR014NPBF


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Technische Details IRLR014NPBF

Description: MOSFET N-CH 55V 10A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D-Pak, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V.

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IRLR014NPBF IRLR014NPBF Hersteller : Infineon Technologies irlr014npbf.pdf Trans MOSFET N-CH Si 55V 10A 3-Pin(2+Tab) DPAK
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IRLR014NPBF IRLR014NPBF Hersteller : Infineon Technologies IRL(R,U)014NPbF.pdf Description: MOSFET N-CH 55V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Produkt ist nicht verfügbar
IRLR014NPBF IRLR014NPBF Hersteller : Infineon / IR irlr014n-1169624.pdf MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC
Produkt ist nicht verfügbar