Produkte > FSC > IRLR110ATF

IRLR110ATF FSC


IRLR,U110A.pdf
Hersteller: FSC
SOT-252
auf Bestellung 2000 Stücke:

Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRLR110ATF FSC

Description: MOSFET N-CH 100V 4.7A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 22W (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 2.35A, 5V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: N-Channel, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).

Weitere Produktangebote IRLR110ATF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRLR110ATF IRLR110ATF onsemi IRLR,U110A.pdf Description: MOSFET N-CH 100V 4.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 2.35A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR110ATF IRLR,U110A.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 4.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 2.35A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH