Technische Details IRLR2703PBF IR
Description: MOSFET N-CH 30V 23A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote IRLR2703PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLR2703PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 30V 23A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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IRLR2703PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 23A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLR2703PBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC |
Produkt ist nicht verfügbar |