IRLR2705TR Infineon
Hersteller: InfineonTranzystor N-MOSFET; 55V; 16V; 65mOhm; 28A; 68W; -55°C ~ 175°C; Odpowiednik: IRLR2705; IRLR2705TR; IRLR2705TRL; IRLR2705-GURT; IRLR2705; YFW50N06AD; MOT30N06D; DH300N08D; IRLR2705TR TIRLR2705
Anzahl je Verpackung: 50 Stücke
auf Bestellung 395 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.19 EUR |
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Technische Details IRLR2705TR Infineon
Description: MOSFET N-CH 55V 28A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V.
Weitere Produktangebote IRLR2705TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRLR2705TR | Hersteller : Infineon |
Tranzystor N-MOSFET; 55V; 16V; 65mOhm; 28A; 68W; -55°C ~ 175°C; Odpowiednik: IRLR2705; IRLR2705TR; IRLR2705TRL; IRLR2705-GURT; IRLR2705; YFW50N06AD; MOT30N06D; DH300N08D; IRLR2705TR TIRLR2705 |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLR2705TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
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