IRLR3103PBF
Produktcode: 85570
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Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-252/D-Pak
Drain-Source-Spannung Uds, V: 30 В
Drain-Strom Idd, A: 55 A
Durchlasswiderstand Rds(on), Ohm: 0,019 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1600/50
Montage: SMD
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Technische Details IRLR3103PBF IR
- MOSFET, N, 30V, 46A, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Cont Current Id:45A
- On State Resistance:0.019ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:1V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:D-PAK
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Junction to Case Thermal Resistance A:1.8`C/W
- Max Voltage Vds:30V
- Max Voltage Vgs th:2V
- Min Voltage Vgs th:1V
- No. of Transistors:1
- On State resistance @ Vgs = 10V:0.019ohm
- Power Dissipation:69W
- Power Dissipation Pd:69W
- Pulse Current Idm:69A
- SMD Marking:IRLR3103
- Transistor Case Style:D-PAK
Weitere Produktangebote IRLR3103PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRLR3103PBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 55A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLR3103PBF | International Rectifier |
Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRLR3103PBF | Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET 19mOhms 33.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLR3103PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR3103PBF |
|
Hersteller: International Rectifier
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR3103PBF |
|
Hersteller: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 19mOhms 33.3nC
MOSFETs 30V 1 N-CH HEXFET 19mOhms 33.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH