Technische Details IRLR3715 IR
Description: MOSFET N-CH 20V 54A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V, Power Dissipation (Max): 3.8W (Ta), 71W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V.
Weitere Produktangebote IRLR3715
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRLR3715 | Hersteller : IR |
 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRLR3715 | Hersteller : IR |
TO-252 |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLR3715 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 54A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRLR3715 | Hersteller : Infineon / IR |
MOSFET |
Produkt ist nicht verfügbar |