IRLR8103TR Infineon Technologies

Description: MOSFET N-CH 30V 89A DPAK, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 89A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).