IRLR8103VPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Technische Details IRLR8103VPBF Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 115W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote IRLR8103VPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRLR8103VPBF | Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRLR8103VPBF |
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Hersteller: Infineon / IR
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


