IRLR8113PBF

Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 94A DPAK
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Hersteller: Infineon Technologies
MOSFETs MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl