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IRLR8721PBF Infineon / IR


Infineon_IRLR8721_DataSheet_v01_01_EN-1228261.pdf
Hersteller: Infineon / IR
MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC
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Technische Details IRLR8721PBF Infineon / IR

Description: MOSFET N-CH 30V 65A DPAK, Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 65W (Tc).

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IRLR8721PBF IRLR8721PBF Infineon Technologies IRLR8721PbF%2CIRLU8721PbF.pdf description Description: MOSFET N-CH 30V 65A DPAK
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 65W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8721PBF description IRLR8721PbF%2CIRLU8721PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 65W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH