IRLR8726PBF Infineon Technologies
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 30, Id = 86 А, Ptot, Вт = 75, Тип монт. = smd, Ciss, пФ @ Uds, В = 2150 @ 15, Qg, нКл = 23 @ 4,5 В, Rds = 5,8 мОм @ 25 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 2,35 В @ 50 мкА,... Група товару: Транзистори Корпус: DPAK-3 Од. ви
Anzahl je Verpackung: 75 Stücke
verfügbar 110 Stücke:
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Technische Details IRLR8726PBF Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V.
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IRLR8726PBF Produktcode: 106471
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Lieblingsprodukt
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Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: D-Pak (TO-252) Uds,V: 30 V Idd,A: 61 A Rds(on), Ohm: 5,8 mOhm Ciss, pF/Qg, nC: 2150/15 Bem.: Управління логічним рівнем JHGF: SMD |
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| IRLR8726PBF | Hersteller : International Rectifier |
N-CH MOSFET 30V 86A DPAK Група товару: Транзистори Од. вим: шт |
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IRLR8726PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRLR8726PBF | Hersteller : Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET 5.8mOhms 15nC |
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