IRLR8726PBF Infineon
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1.49 EUR |
| 10+ | 1.3 EUR |
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Technische Details IRLR8726PBF Infineon
Description: MOSFET N-CH 30V 86A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V.
Weitere Produktangebote IRLR8726PBF
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IRLR8726PBF Produktcode: 106471 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: D-Pak (TO-252) Uds,V: 30 V Idd,A: 61 A Rds(on), Ohm: 5,8 mOhm Ciss, pF/Qg, nC: 2150/15 Bem.: Управління логічним рівнем JHGF: SMD |
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IRLR8726PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V |
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IRLR8726PBF | Hersteller : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC |
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IRLR8726PBF | Hersteller : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 75W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |