IRLS4030PBF

Hersteller: International Rectifier
IRLS 4030 PBF TO263 IRF Транзистори

Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube

Hersteller: Infineon Technologies
MOSFET 100V 1 N-CH HEXFET 4.3mOhms 87nC