IRLTS6342TRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
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Technische Details IRLTS6342TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V.
Weitere Produktangebote IRLTS6342TRPBF nach Preis ab 0.2 EUR bis 0.93 EUR
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IRLTS6342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6 Power dissipation: 2W Kind of package: reel Case: TSOP6 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 8.3A Drain-source voltage: 30V |
auf Bestellung 754 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLTS6342TRPBF | Infineon Technologies |
MOSFETs 30V 8.3A 17.5mOhm 2.5V drive capable |
auf Bestellung 8826 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLTS6342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 8.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V |
auf Bestellung 6911 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLTS6342TRPBF Транзисторы HEXFET |
auf Bestellung 110 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRLTS6342TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Power dissipation: 2W
Kind of package: reel
Case: TSOP6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 8.3A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Power dissipation: 2W
Kind of package: reel
Case: TSOP6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 8.3A
Drain-source voltage: 30V
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 182+ | 0.39 EUR |
| 216+ | 0.33 EUR |
| 247+ | 0.29 EUR |
| 277+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| IRLTS6342TRPBF |
|
Hersteller: Infineon Technologies
MOSFETs 30V 8.3A 17.5mOhm 2.5V drive capable
MOSFETs 30V 8.3A 17.5mOhm 2.5V drive capable
auf Bestellung 8826 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
| IRLTS6342TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
auf Bestellung 6911 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| IRLTS6342TRPBF |
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IRLTS6342TRPBF Транзисторы HEXFET
auf Bestellung 110 Stücke:
Lieferzeit 7-21 Tag (e)